diff options
| author |   Brian Norris <computersforpeace@gmail.com> | 2012-01-13 18:11:47 -0800 |
|---|---|---|
| committer |   David Woodhouse <David.Woodhouse@intel.com> | 2012-03-27 00:11:34 +0100 |
| commit | 009184296d957d864d6fa9ac2dd192d29e069878 (patch) | |
| tree | 6b5101ac812ba958c94f183eafe112063a835ad0 /drivers | |
| parent | mtd: onenand: samsung: add missing iounmap (diff) | |
| download | linux-dev-009184296d957d864d6fa9ac2dd192d29e069878.tar.xz linux-dev-009184296d957d864d6fa9ac2dd192d29e069878.zip | |
mtd: nand: erase block before marking bad
Many NAND flash systems (especially those with MLC NAND) cannot be
reliably written twice in a row. For instance, when marking a bad block,
the block may already have data written to it, and so we should attempt
to erase the block before writing a bad block marker to its OOB region.
We can ignore erase failures, since the block may be bad such that it
cannot be erased properly; we still attempt to write zeros to its spare
area.
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Diffstat (limited to 'drivers')
| -rw-r--r-- | drivers/mtd/nand/nand_base.c | 11 |
1 files changed, 11 insertions, 0 deletions
diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c index 8a393f9e6027..cd827d5a8255 100644 --- a/drivers/mtd/nand/nand_base.c +++ b/drivers/mtd/nand/nand_base.c @@ -394,6 +394,17 @@ static int nand_default_block_markbad(struct mtd_info *mtd, loff_t ofs) uint8_t buf[2] = { 0, 0 }; int block, ret, i = 0; + if (!(chip->bbt_options & NAND_BBT_USE_FLASH)) { + struct erase_info einfo; + + /* Attempt erase before marking OOB */ + memset(&einfo, 0, sizeof(einfo)); + einfo.mtd = mtd; + einfo.addr = ofs; + einfo.len = 1 << chip->phys_erase_shift; + nand_erase_nand(mtd, &einfo, 0); + } + if (chip->bbt_options & NAND_BBT_SCANLASTPAGE) ofs += mtd->erasesize - mtd->writesize; |